Nansha sets up wide bandgap semiconductor innovation center

The 2020 Innovative Development Forum on Wide Bandgap Semiconductors for New Energy Vehicles is held in Nansha on Nov 27. [Photo by Liu Wei/gznsnews.com.cn]

An agreement to push forward the construction of the innovation center on wide bandgap semiconductors in Guangzhou's Nansha district was signed during the 2020 Innovative Development Forum on Wide Bandgap Semiconductors for New Energy Vehicles, which was held in Nansha on Nov 27.

The forum attracted more than 200 domestic and overseas attendees, including experts, scholars, government officials, and senior managers from companies, to discuss the cross-industry collaborative innovation mechanism, promoting the demonstrative application of wide bandgap semiconductors in new energy vehicles.

Lei Peng, an official from the Ministry of Science and Technology, expressed his hope that the forum can further push forward the technological innovation and integration of wide bandgap semiconductors and new energy vehicles to make more contributions to the high-quality development of the industries. 

Xie Ming, executive deputy mayor of Nansha district, noted that Nansha has formed a completed industrial chain for wide bandgap semiconductors, and is planning to establish a hub for the innovative development of the wide bandgap semiconductor industry in the district. 

The innovation center on wide bandgap semiconductors is designed to promote the transformation and upgrading of the new energy vehicle industry in Nansha and Guangdong province, as well as the innovative development of emerging strategic industries like the wide bandgap semiconductor industry.